Room Temperature Photodetector Based on ANISOTYPE (n-p) Ge-Si Heterojunction

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Raid A. Ismail

Abstract

In this work we present a detailed study on anisotype nGe-pSi heterojunction (HJ) used as photodetector in the wavelength range (500-1100 nm). I-V characteristics in the dark and under illumination, C-V characteristics, minority carriers lifetime (MCLT), spectral responsivity, field of view, and linearity were investigated at 300K. The results showed that the detector has maximum spectral responsivity at λ=950 nm. The photo-induced open circuit voltage decay results revealed that the MCLT of HJ was around 14.4 μs

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1.
Ismail RA. Room Temperature Photodetector Based on ANISOTYPE (n-p) Ge-Si Heterojunction. IJP [Internet]. 2009 Oct. 1 [cited 2024 Dec. 25];7(9):37-41. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/894