Porous Silicon effect on the performance of CdS nanoparticles photodetector

  • Mymana W. Eesa
Keywords: CdS nano particle, thin film, photo detector, porous silicon, responsivity, I-V characteristic.


Cadmium sulfide photodetector was fabricated. The CdS nano
powder has been prepared by a chemical method and deposited as a
thin film on both silicon and porous p- type silicon substrates by spin
coating technique. Structural, morphological, optical and electrical
properties of the prepared CdS nano powder are studied. The X-ray
analysis shows that the obtained powder is CdS with predominantly
hexagonal phase. The Hall measurements show that the nano powder
is n-type with carrier concentration of about (-5.4×1010) cm-3. The
response time of fabricated detector was measured by illuminating
the sample with visible radiation and its value was 5.25 msec. The
specific detectivity of the fabricated detector is found to be (9×1011
W-1 .Hz1/2.Cm- 1). The responsivity was (0.03A/W).