Dependence of the Hall Mobility and Carrier Concentration on Thickness and Annealing Temperature
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Published:
Dec 1, 2002
Keywords:
Hall, Concentration
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Abstract
Hall effect measurements have been made on a-As2Te3 thin films different thickness film in the range (200-350) nm. The Hall mobility in a-As2Te3 thin films decreases with increasing annealing temperature but the carrier concentration increases. When increasing the film thickness increases the Hall mobility decreases, while the carrier concentration increases.
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Dependence of the Hall Mobility and Carrier Concentration on Thickness and Annealing Temperature. IJP [Internet]. 2002 Dec. 1 [cited 2024 May 12];1(1):72-4. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/957
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How to Cite
1.
Dependence of the Hall Mobility and Carrier Concentration on Thickness and Annealing Temperature. IJP [Internet]. 2002 Dec. 1 [cited 2024 May 12];1(1):72-4. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/957