Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

Main Article Content

Raied K. Jamal

Abstract

The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.

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How to Cite
1.
Jamal RK. Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition. IJP [Internet]. 2019 Feb. 3 [cited 2022 Jan. 27];14(29):37-43. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/218
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