The effect of the etching time on the electrical properties of nano structure silicon
Main Article Content
Abstract
This work presents the study of the dark current density and the capacitance for porous silicon prepared by photo-electrochemical etching for n-type silicon with laser power density of 10mw/cm2 and wavelength (650nm) under different anodization time (30,40,50,60) minute. The results obtained from this study shows different chara that different characteristic of porous diffecteristics for the different porous Silicon layers.
Article Details
Issue
Section
Articles
This work is licensed under a Creative Commons Attribution 4.0 International License.
© 2023 The Author(s). Published by College of Science, University of Baghdad. This is an open-access article distributed under the terms of the Creative Commons Attribution 4.0 International License.
How to Cite
1.
Al-Kadumi AK. The effect of the etching time on the electrical properties of nano structure silicon. IJP [Internet]. 2012 Oct. 1 [cited 2024 Dec. 23];10(18):1-4. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/737