Study of Some Structural Properties of Porous Silicon Preparing by Photochemical Etching

Article Sidebar

PDF
Published: Dec 30, 2009
Keywords:
Porous silicon, Photochemical, Structural properties

Main Article Content

Ghaida S. M
Department of Physics, College of Science, University of Baghdad, Jadiriya, Baghdad, Iraq

Abstract

Porous Silicon (PSi) has been produced in this work by using Photochemical (PC) etching process by using a hydrofluoric acid (HF) solution. The irradiation has been achieved using quartz- tungsten halogen lamp. The influence of various irradiation times on the properties of PSi اmaterial such as layer thickness, etching rate and porosity was investigated in this work too.
The XRD has been studied to determine the crystal structure and the crystalline size of PSi material

Article Details

How to Cite
1.
M GS. Study of Some Structural Properties of Porous Silicon Preparing by Photochemical Etching. IJP [Internet]. 2009 Dec. 30 [cited 2024 Dec. 19];7(8):49-52. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/914
Issue
Vol. 7 No. 8 (2009)
Section
Articles
Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

© 2023 The Author(s). Published by College of Science, University of Baghdad. This is an open-access article distributed under the terms of the Creative Commons Attribution 4.0 International License. 

Similar Articles

You may also start an advanced similarity search for this article.