The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

  • Ghasaq Ali Tomaa Department of Physics, Collage of Science, Al-Nahrain University
  • Alaa Jabbar Ghazai Department of Physics, Collage of Science, Al-Nahrain University
Keywords: Porous silicon, XRD, Electrochemical etching, Morphological, Properties

Abstract

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.

Published
2021-09-01
How to Cite
1.
Tomaa G, Ghazai A. The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films. IJP [Internet]. 1Sep.2021 [cited 19Sep.2021];19(50):77-3. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/665
Section
Articles