The Temperature Dependence of Photoconductivity in a-Ge20Se80 Thin Films

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Published: Mar 1, 2008
Keywords:
photoconductivity

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Nada K. Abbas
Department of Physics, College of Science, University of Baghdad

Abstract

The photoconductivity and its dependence on light intensity have been investigated in a-Ge20Se80 thin films as a function of temperature between (293–323)K. The result showed that the photoconductivity and photosensitivity increase with increase of annealing temperature. This behavior is interpreted in terms of the dispersive diffusion –controlled recombination of localized electrons and holes.

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How to Cite
1.
Abbas NK. The Temperature Dependence of Photoconductivity in a-Ge20Se80 Thin Films. IJP [Internet]. 2008 Mar. 1 [cited 2024 Dec. 19];5(1):30-3. Available from: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/931
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Vol. 5 No. 1 (2008)
Section
Articles
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© 2023 The Author(s). Published by College of Science, University of Baghdad. This is an open-access article distributed under the terms of the Creative Commons Attribution 4.0 International License.