Employment of Silicon Nitride Films Prepared by DC Reactive Sputtering Technique for Ion Release Applications. Iraqi Journal of Physics, [S. l.], v. 21, n. 3, p. 33–40, 2023. DOI: 10.30723/ijp.v21i3.1141. Disponível em: https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/1141.. Acesso em: 10 may. 2024.